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 Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10uA (Max.) @ VDS= -200V Lower RDS(ON) : 0.383 (Typ.)
SFP9640L
BVDSS = -200 V RDS(on) = 0.5 ID = -11 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) Continuous Drain Current (TC=100) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds

Value -200 -11 -7.5 -44 20 806 -11 9.8 -5.0 98 0.78 - 55 to +150
Units V A A V mJ A mJ V/ns W W/
300
Thermal Resistance
Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.27 -62.5 /W Units
Rev. A
SFP9640L
Electrical Characteristics (TC=25 unless otherwise specified)
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units --0.16 ------5.47 ---2.0 -100 100 -10 -100 0.5 -A S V V/ V nA
N-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=-250A ID=-250A VGS=-20V VGS=20V VDS=-200V VDS=-160V,TC=125 VGS=-5V,ID=-5.5A VDS=-40V,ID=-5.5A

Drain-Source Breakdown Voltage -200 Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(Miller) Charge --1.0 -----------------
See Fig 7
VDS=-5V,ID=-250A
1220 1585 207 310 81 16 23 54 19 46 9.2 22.9 120 40 55 115 50 59 --nC ns pF
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-100V,ID=-11A, RG=4.6 See Fig 13 VDS=-160V,VGS=-5V, ID=-11A See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Min. Typ. Max. Units --------205 1.45 -11 -44 -5.0 --A V ns C
Test Condition Integral reverse pn-diode in the MOSFET TJ=25,IS=-11A,VGS=0V TJ=25,IF=-11A diF/dt=100A/s
Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=3mH, IAS=-11A, VDD=-50V, RG=27, Starting TJ =25 ISD-11A, di/dt100A/s, VDDBVDSS , Starting TJ =25 Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature
P-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5V Top :
SFP9640L
Fig 2. Transfer Characteristics
11 0
-ID , Drain Current [A]
ID , Drain Current [A]
11 0
1 0 oC 5 10 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =3 V . DS 0 us et 3 2 0 s P l e T s .5 - 5 oC 5
10 0
@Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 1 -1 -1 0 1 0 10 0 11 0
1 -1 0
2
4
6
8
1 0
VDS , Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
10 .
Fig 4. Source-Drain Diode Forward Voltage
-IDR , Reverse Drain Current [A]
RDS(on) , [ ] Drain-Source On-Resistance
08 . V =- V 5 GS 06 .
11 0
04 .
10 0 1 0 oC 5 2 oC 5 1 -1 0 05 . @Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et
02 .
V =1 V GS - 0 @ N t : T = 2 oC oe J 5
00 . 0
5
1 0
1 5
2 0
2 5
3 0
10 .
15 .
20 .
25 .
30 .
35 .
40 .
45 .
50 .
ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
40 00 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 30 00
75 .
Fig 6. Gate Charge vs. Gate-Source Voltage
-VGS , Gate-Source Voltage [V]
Capacitance [pF]
50 .
V =-0V 4 DS V =-0 V 10 DS V =-6 V 10 DS
C iss 20 00
10 00
C oss C rss
@Nts: oe 1 V =0V . GS 2 f=1Mz . H
25 .
@Nts:I =-. A oe 65 D 00 . 0 5 1 0 1 5 2 0 2 5
00 1 0
11 0
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
SFP9640L
Fig 7. Breakdown Voltage vs. Temperature
12 . 25 .
P-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
-BVDSS , (Normalized) Drain-Source Breakdown Voltage
RDS(on) , (Normalized) Drain-Source On-Resistance
11 .
20 .
15 .
10 .
10 .
09 .
@Nts: oe 1 V =0V . GS 2 I = 2 0 A .D 5
@Nts: oe 1 V =- V . GS 5 2 I =-. A . D 55
05 . 20 0 -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 20 0
08 . -5 7
-0 5
-5 2
0
2 5
5 0
7 5
10 0
15 2
10 5
15 7
TJ , Junction Temperature [oC]
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
12 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y 01m .s 1m s 11 0 D C @Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us 1 -1 0 0 1 0 1m 0s
Fig 10. Max. Drain Current vs. Case Temperature
1 2
-ID , Drain Current [A]
1 0
-ID , Drain Current [A]
8
6
10 0
4
2
11 0
12 0
0 2 5
5 0
7 5
10 0
15 2
10 5
-VDS , Drain-Source Voltage [V]
Tc , Case Temperature [oC]
Fig 11. Thermal Response
Thermal Response
100 D=0.5 @ Notes : 1. Z J C (t)=1.02 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)
PDM
0.2 10- 1 0.1 0.05 0.02 0.01 single pulse
Z (t) ,
JC
t1 t2
10- 2 - 5 10
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration
[sec]
P-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
SFP9640L
* Current Regulator "
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (IG) Resistor
R2
Current Sampling (ID) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT Vin 10V
td(on) t on tr td(off) t off tf 10%
Vout VDD
( 0.5 rated VDS )
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
SFP9640L
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
P-CHANNEL POWER MOSFET
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
* dv/dt controlled by RG * IS controlled by Duty Factor D
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4


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